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Plasma Simulation

Plasma Simulation Artificial Intelligence Analysis FEA|CFD & AI Integration

We provide consulting services for the modeling and simulation of plasma and other flow systems. we combine expertise in physics, Numerical computing, big data processing, automation, and management. Our people are truly motivated experts, passionate about science. Our consulting services utilize our specialized domain expertise in plasma, reactive flows and surface chemistry mechanism development and integration with multi-dimensional flow and plasma systems.

Simulation Dynamics uses advanced electromagnetic FEA, CFD and particle-in-cell (PIC) codes, designed for executing multi-scale, plasma physics simulations. Based on the problem and its detail, we use special commercial code or even develop new codes and subroutines to capture the interaction between charged particles (electrons and ions) and external and self-generated electric and magnetic fields.

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Plasma Simulation, Integrated FEA|CFD with Artificial Intelligence

Nanoparticle Synthesis Simulation Based Design

Plasma-based chemical processes are characterized by solvent-less (dry), high-purity, and low-temperature conditions that enable damage-free device fabrication. plasma tools are now essential to the large-scale manufacturing of microelectronic devices. Nanoparticles form the basis of many novel materials. A core competence at the Plasma-Dynamics is the synthesis of such particles in gas-phase flow reactors.

The modeling and simulation of particle-laden, chemically reacting flows is essential to improve the understanding of the processes, to design of reactors and to scale-up laboratory experiments to production facilities. The modeling is based on the implementation of physical models with the expansion of the advanced numerical tools by introducing of new libraries and flow solvers. The resulting simulation results were justified by experimental or analytical memory whereby the models were validated.

Solve Complex Problems with Multiphysics Simulation.

Simulation Dynamics
Nanoparticle Synthesis Simulation Based Design, Ansys, Simulia, Siemens, Integrated FEA|CFD with Artificial Intelligence
Plasma Simulation: Nanoparticle Synthesis Simulation Based Design

Numerical Simulation of Dense Plasma Focus Devices

A dense plasma focus (DPF) is a plasma machine that produces, by electromagnetic acceleration and compression, short-lived plasma that is so hot and dense that it becomes a copious multi-radiation source. The DPF device has always been in the company of several alternative magnetic fusion devices as it produces intense fusion neutrons.

Several experiments conducted on many different DPF devices ranging over several order of storage energy have demonstrated that at higher storage energy the neutron production does not follow I4 scaling laws and deteriorate significantly raising concern about the device’s capability and relevance for fusion energy. On the other hand, the high energy density pinch plasma in DPF device makes it a multiple radiation source of ions, electron, soft and hard x-rays, and neutrons, making it useful for several applications in many different fields such as lithography, radiography, imaging, activation analysis, radioisotopes production etc.

A great deal of experimental research has been done into the physics of DPF reactions, and there exist mathematical models describing its behavior during the different time phases of the reaction. Two of the phases, known as the inverse pinch and the rundown, are approximately governed by magnetohydrodynamics, and there are a number of well-established codes for simulating these phases in two dimensions or in three dimensions under the assumption of axial symmetry.

our engineering and scientific team can cover and develop new packages and software to simulate most complex problems in plasma dynamics including dense plasma focus (DPF) .

Revolutionize Fluid Dynamics with CFD Simulation.

Simulation Dynamics
Numerical Simulation of Dense Plasma Focus Devices, Ansys, Simulia, Siemens, Integrated FEA|CFD with Artificial Intelligence
Plasma Simulation: Numerical Simulation of Dense Plasma Focus Devices

Numerical Simulation of Magnetron sputtering

Magnetron sputtering deposition is a fast technique for applying a thin layer of inorganic materials on a substrate. Magnetron sputtering is the collision process between incident particles and targets. Since high-speed sputtering is performed at a low pressure, it is necessary to effectively increase the ionization rate of the gas. The incident particle undergoes a complex scattering process in the target, collides with the target atom, and transmits part of the momentum to the target atom, which in turn collides with other target atoms to form a cascade process.

the interaction between the magnetic field and the electric field causes the electrons to spiral in the vicinity of the target surface, thereby increasing the probability that electrons will strike the argon gas to generate ions. The generated ions collide with the target surface under the action of an electric field to sputter the target. The target source is divided into balanced and unbalanced types; the balanced target source is uniformly coated, and the unbalanced target coating layer and the substrate have strong bonding force.

Balanced target sources are mostly used in semiconductor optical films, and unbalanced are mostly used in wear decorative films. Sputtering metals and alloys with a magnetron target is easy, and it is convenient for ignition and sputtering. Magnetron reactive sputtering insulators appear to be easy, but it is difficult for practical operations:

Unbalanced magnetron sputtering

Closed-field unbalanced magnetron sputtering

Pulsed magnetron sputtering

Numerical simulation of sputtering process requires accurate models of nuclear stopping in materials, particle dynamics and self-consistent electromagnetic fields. Based on the problem details, Particle‐in‐Cell/Monte Carlo Collisions technique it includes techniques for the gas heating and the diffusion transport of the sputtered atoms. An external electric circuit is incorporated to achieve the calculation of the cathode voltage in a self‐consistent manner, as well as the simulation of the constant current regime.

Engineering Reliability, One Simulation at a Time.

Simulation Dynamics
Numerical Simulation of Magnetron sputtering, Ansys, Simulia, Siemens, Integrated FEA|CFD with Artificial Intelligence
Plasma Simulation: Numerical Simulation of Magnetron sputtering

Plasma Cleaning

The operational cost of using plasma cleaning systems are low, while providing the highest quality in cleaning surfaces. Another benefit of using a plasma cleaning system is that it eliminates the need to use chemical solvents.

Ultra fine cleaning of surfaces with cold atmospheric pressure plasmas is a process of removing organic, inorganic and microbial surface contaminants, as well as strongly adhering dust particles. It is highly efficient and at the same time very gentle to the treated surface. At higher strength, it can remove weak surface boundary layers, cross-link surface molecules and even reduce hard metal oxides. Plasma cleaning promotes wettability and adhesion enabling a wide spectrum of industrial processes preparing surfaces for bonding, gluing, coating and painting. While being performed using air or typical industrial gases including hydrogen, nitrogen and oxygen, it avoids wet chemistry and expensive vacuum equipment, which positively affects its costs, safety and environmental impact. Fast processing speeds further facilitate numerous industrial applications.

As a result, using plasma cleaning eliminates the need for storage facilities or for making arrangements for solvent waste disposal. Plasma is a proven and effective method for critical surface preparation:

Oxygen-Based Plasma Cleaning

Hydrogen-Based Plasma Cleaning

Argon-Based Plasma Cleaning

Artificial Intelligence & Machine Learning Powers the Future of Simulation.

Simulation Dynamics
Plasma Cleaning, Ansys, Simulia, Siemens, Integrated FEA|CFD with Artificial Intelligence
Plasma Simulation: Plasma Cleaning

Plasma Etching Simulation

Plasma etching is an essential tool in today’s world, enabling many of the technologies we take for granted. The chemical nature of a process gas dictates how its plasma reacts with the surface of a material and therefore the effectiveness of plasma etching. For instance, tetrachloromethane (CCl4) etches silicon and aluminium effectively but the plasma etching of silicon dioxide and silicon nitride requires the use of trifluoromethane (CHF3). Native oxide layers, on the other hand, can be removed from a titanium surface by argon plasma etching. Other examples of plasma etching as a means of surface preparation for biomedical coatings.

Inductively Coupled Plasma Reactive-Ion Etching (ICP-RIE):

Inductively coupled plasma reactive ion etching (ICP-RIE) is used in the fabrication of GaAs slab-coupled optical waveguide (SCOW) laser and amplifier devices in order to prepare etched-ridge-waveguide surface features. The processing of GaAs wafer pieces (less than full wafers) requires mounting these samples on a ceramic or silicon carrier wafer by means of a thermally conductive mounting paste to improve thermal contact between the GaAs and carrier wafer. However, use of a mounting paste requires additional postetch handling of samples, including mechanical clean-up and multiple solvent cleaning steps. Insufficient paste removal can lead to unwanted surface contamination and film adhesion issues during subsequent sample processing.

Reactive ion etching (RIE):

Reactive ion etching (RIE) is a plasma process where radiofrequency (RF) discharge-excited species (radicals, ions) etch substrate or thin films in a low-pressure chamber. RIE is a synergistic process between chemically active species and energetic ion bombardment. RIE is faster than either pure physical ion bombardment or spontaneous chemical etching. Understanding the consequences of local surface charging on the evolving etching profile is a critical challenge in high density plasma etching. Deflection of the positively charged ions in locally varying electric fields can cause profile defects such as notching, bowing, and microtrenching.

A realistic process simulation therefore needs to consider these interactions, which makes the numerical simulation more challenging. Suitable numerical methods or adequate approximations are crucial for the simulation of feedback and interactions.

AI Transforms Multiphysics Simulation.

Simulation Dynamics
Plasma Etching Simulation, Ansys, Simulia, Siemens, Integrated FEA|CFD with Artificial Intelligence
Plasma Simulation: Plasma Etching Simulation

Plasma-enhanced chemical vapor deposition (PECVD)

Plasma-enhanced chemical vapor deposition coating:

Plasma-enhanced chemical vapor deposition (PECVD) is a thin-film deposition technique that allows for tunable control over the chemical composition of a thin film. The films typically deposited using PECVD are silicon nitride (SixNy), silicon dioxide (SiO2), silicon oxy-nitride (SiOxNy), silicon carbide (SiC), and amorphous silicon (α-Si). Silane (SiH4), the silicon source gas, is combined with an oxygen source gas to form silicon dioxide or a nitrogen gas source to produce silicon nitride.

Numerical methods used to solve multi-scale and multi phase models and to obtain qualitative results for the delicate multiphysical processes in the chamber. Such numerical simulations help us to economize on expensive physical experiments and obtain control mechanisms for the delicate deposition process.

Generative Design + CFD: Topology-Optimized Fluid Dynamics

Simulation Dynamics
Plasma-enhanced chemical vapor deposition (PECVD), Ansys, Simulia, Siemens, Integrated FEA|CFD with Artificial Intelligence
Plasma Simulation: Plasma-enhanced chemical vapor deposition (PECVD)

Simulation Based Design of Plasma Thrusters

Electric propulsion technology, called Hall effect or stationary plasma thrusters, offers a significant weight reduction compared with traditional chemical propulsion systems. In Plasma Thrusters that special type of Electric thrusters, a stream of electrons bombards, generating a plasma that is accelerated to produce very high specific impulse for applications in the vacuum of space where less absolute power is needed.

The operation of ion thrusters in space constitutes a very interesting active plasma experiment, and the associated plasma physical dynamics are only poorly understood. We can give a detailed insight and investigation of the thruster-induced plasma environment and describe related phenomena with numerical simulation with which we attempt to explore the main dynamical phenomena in this environment.

Cognitive FEA: Machine Learning-Predictive Structural Integrity

Simulation Dynamics
Simulation Based Design of Plasma Thrusters, Ansys, Simulia, Siemens, Integrated FEA|CFD with Artificial Intelligence
Plasma Simulation: Simulation Based Design of Plasma Thrusters

Simulation of Plasma Based Devices

We provide consulting services for the modeling and simulation of plasma and other flow systems. we combine expertise in physics, Numerical computing, big data processing, automation, and management. Our people are truly motivated experts, passionate about science. Our consulting services utilize our specialized domain expertise in plasma, reactive flows and surface chemistry mechanism development and integration with multi-dimensional flow and plasma systems.

Our cutting-edge Artificial Intelligence & Machine Learning integrated development solutions combine technical excellence with business insight to deliver exceptional digital experiences.

Simulation Dynamics
Simulation of Plasma Based Devices, Ansys, Simulia, Siemens, Integrated FEA|CFD with Artificial Intelligence
Plasma Simulation: Simulation of Plasma Based Devices

Spacecraft Shielding

Traditional methods for protecting spacecraft and occupants from harmful radiation in the form of energetic particles from solar and galatic sources involve some configuration of a massive material shield to absorb the energy of incoming particles. Designing a magnetic shield that is strong enough to deflect GCR particles but weak enough to not harm astronauts is a challenge. Investigating possible solutions involves a combination of electromagnetic theory, numerical analysis, engineering practicality, and an astronaut’s sense of exploration.

By using advanced numerical simulation tools and methods we can predict, design and re-design systems to most optimized configuration to protect spacecraft from spacecraft-plasma interactions and electromagnetic waves harmful effects. We can investigate orbital debris impact with advanced finite element tools such as ansys ls-dyna and abaqus for any probabilistic impact problem, also.

Multiphysics AI: Simulate Fluids, Structures, & Electromagnetics

Simulation Dynamics
Spacecraft Shielding, Ansys, Simulia, Siemens, Integrated FEA|CFD with Artificial Intelligence
Plasma Simulation: Spacecraft Shielding

Spacecraft and Satellite charging effects Numerical Simulation

Spacecraft charging includes both surface charging and internal dielectric charging. The absolute charging of spacecraft surfaces is not generally detrimental; rather it is the possible discharge effects which can disrupt satellite operations. Most of the undesired effects of both charging types are due to the discharge arcing, and include physical materials damage and electromagnetic interference generation.

The buildup of large potentials on spacecraft and satellite relative to the ambient plasma is not, of itself, a serious electrostatic discharge design concern. However, such charging enhances surface contamination, which degrades thermal properties. It also compromises scientific missions seeking to measure properties of the space environment. Spacecraft systems referenced to structure ground are not affected by a uniformly charged spacecraft. However, spacecraft surfaces are not uniform in their material properties, surfaces will be either shaded or sunlit, and the ambient fluxes may be anisotropic.

These and other charging effects can produce potential differences between spacecraft surfaces or between spacecraft surfaces and spacecraft ground. When a breakdown threshold is exceeded, an electrostatic discharge can occur. The transient generated by this discharge can couple into the spacecraft electronics and cause upsets ranging from logic switching to complete system failure. Discharges can also cause long term degradation of exterior surface coatings and enhance contamination of surfaces.

Vehicle torquing or wobble can also be produced when multiple discharges occur. The ultimate results are disruptions in spacecraft operation.Surface charging could disrupt environmental measurements on scientific spacecraft. For this application and others where control of electrostatic fields is required, material selection to minimize differential charging is mandatory. For operational spacecraft, surface charging can also cause problems. The hallmark of the spacecraft charging phenomena is the occurrence of electronic switching anomalies.

AI-Driven Simulations for Smarter Engineering.

Simulation Dynamics
Spacecraft and Satellite charging effects Numerical Simulation, Ansys, Simulia, Siemens, Integrated FEA|CFD with Artificial Intelligence
Plasma Simulation: Spacecraft and Satellite charging effects Numerical Simulation